Title of article :
Extended-Gate Field-Effect Transistor based Sensor for Detection of Hyoscine N-Butyl Bromide in its Pharmaceutical Formulation
Author/Authors :
Sheibani, Shokoofeh Center of Excellence in Electrochemistry - School of Chemistry - University of Tehran - Tehran, 1417614411, Iran , Mirzaie, Iman School of Electrical Engineering - Sharif University of Technology, Tehran, Iran , Fardmanesh, Mehdi School of Electrical Engineering - Sharif University of Technology, Tehran, Iran , Norouzi, Parviz Center of Excellence in Electrochemistry - School of Chemistry - University of Tehran - Tehran, 1417614411, Iran
Abstract :
A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the extended metal gate. In optimal conditions, the linear range for HBB was 10-8-10-5 molL−1 with limit of detection 1.7×10-9 molL-1. The proposed sensor was applied in real sample, it showed fast response with high accuracy, and therefore it could be used as HPLC detector in the pharmaceutical samples in quality control.
Keywords :
Ion Sensitive Field Effect Transistors sensor , Hyoscine N-Butyl bromide , PVC membrane
Journal title :
Analytical and Bioanalytical Electrochemistry
