Temperature dependence dielectric behavior of Ge-doped lead scandium tantalate single crystals

The doping of Pb2SeTaO6 with Ge ferroelectrics was produced by a high-temperature solution method. We measure dielectric constant, dielectric loss and conductivity in the temperature range −30°C to 200°C and frequency range 1 to 100 KHz. The value of dielectric constant of the Pb2SeTaO6 (PST) crystal remained the same after thermal annealing whereas they decreased after Ge doping in the phase transition temperature range of the PST single crystal. All samples were investigated for conductivity with increasing temperature.