ELECTRICAL ANALYSIS OF SILICON PHASE MODULATOR BASED ON CARRIER DISPERSION EFFECT AT λ, 1.3 μM AND 1.55 μM

This paper highlights study of carrier dispersion effect on silicon waveguide with p-i-n diode and n-p-n structure. The device performance is predicted by using 2D Silvaco CAD software under different applied voltages. This report investigates on three aspects which are effective refractive index variations of the device in forward and reverse biased, performance modulation efficiency and free carrier absorption loss. The phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode. Both designs prove that working at wavelength 1.55 ìm is suggested to have a device with better phase modulation efficiency. Structure-wise, n-p-n structure is more efficient with VðLð 0.8 Vcm but suffers more absorption loss with 0.03452082 dB/cm. The modulation efficiency for p-i-n structure is less with 1.2Vcm but experiences less absorption loss with 0.03373607 dB/cm.