300 GHz detection using High Electron Mobility Transistor (HEMT) as sub-THz detector

In this paper, we report the detection of sub-THz (300 GHz) radiation by using High Electron Mobility Transistor (HEMT). The observation of photoresponse are measured against gate voltage. The measured photoresponse is a superposition of a generally increasing response with a decrease in VGS coupled with a small peak approximately at threshold. The response has also been measured as a function of current, frequency and RF input power and there is evidence that the HEMT can be a sensitive sub- THz detector.