A HYDROGEN SENSITIVE Pd/GaN SCHOTTKY DIODE SENSOR

In this work, theforward current of Pd/GaN Schottky diodes is foundto increase significantly upon introduction of H into an Nambient. Analysis of the current-voltage characteristics as a function oftemperature shows that the current increase is due to adecrease in effective barrier height through a reduction in metalwork function upon absorption of hydrogen. 22 Experimental results also reveal that during the hydride formation process, the forward current is increased by the increase of temperature for hydrogen. This work also demonstrates that the Schottky barrier height indeed increases with increasing temperatures, and the resistance of the Pd/n-GaN device decreases with increasing temperature