Title of article
Investigation of the Switching Phenomena in TlGaSe2 Single Crystal
Author/Authors
Hussein, S.A. South Valley University - Faculty of Science - Physics Department , Attia, G. Girls Colleges of Education, Egypt , Al harbi, S.R. King Abdulaziz University - Faculty of Science, Saudi Arabia , Al Ghamdi, A.A. King Abdulaziz University, Saudi Arabia , Al Hazmi, F.S. King Abdulaziz University, Saudi Arabia , Al Garni, S.E. King Abdulaziz University - Faculty of Science, Saudi Arabia
From page
27
To page
40
Abstract
An Investigation was made of switching in TlGaSe2 singlecrystals under static condition. Current-controlled negative resistance(CCNR) in TlGaSe2 single crystals have been observed for the firsttime. It has been found that Thallium gallium diselenide singlecrystals exhibit bistable or memory switching. The results stronglyindicated that the phenomenon in our sample is very sensitive totemperature, light intensity and sample thickness. The current-voltagecharacteristics is symmetrical with respect to the reverse of the appliedvoltage and current. The switching parameters were checked under theinfluence of different factors of the ambient condition.
Journal title
Journal of King Abdulaziz University : Science
Journal title
Journal of King Abdulaziz University : Science
Record number
2590424
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