Title of article
Electron Transfer At Semiconductor / Liquid Interfaces
Author/Authors
Al-Agealy, H.J.M. University of Baghdad - College of Education Ibn-Al-Haitham - Department of Physics, Iraq , AL-Obaidi, R.I.N. Universityof Baghdad - College of Education Ibn- Al- Haitham - Department of physics, Iraq
From page
--
To page
--
Abstract
Electron Transfer reaction rate constants at Semiconductor / Liquid interfaces are calculated dy using the Fermi Golden Rule for Semiconductor. The reorganization energy λ(eV) is computed for Semiconductor / Liquid Interfaces system in two solvents and compared with experimental value. The driving force (free energy) ΔGo(eV) is calculated depending on spectrum Ru(H2L`)2 (NCS)2 . The transfer is treated according with weak coupling (nonadiabatic) for two – state level between the Semiconductor and acceptor molecule state.
Journal title
Ibn Alhaitham Journal For Pure and Applied Science
Journal title
Ibn Alhaitham Journal For Pure and Applied Science
Record number
2601477
Link To Document