• Title of article

    Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations

  • Author/Authors

    Bahrami, Payman Department of Electrical Engineering - Yazd Branch Islamic Azad University, Yazd, Iran , Shayesteh, Mohammad Reza , Pourahmadi, Majid Department of Electrical Engineering - Yazd Branch Islamic Azad University, Yazd, Iran , Hadi Safdarkhani Department of Electrical Engineering - Yazd University, Yazd, Iran

  • Pages
    18
  • From page
    65
  • To page
    82
  • Abstract
    We present the optimization of the manufacturing process of the 5nm bulk- FinFET technology by using the 3D process and device simulations. In this paper, by simulating the manufacturing processes, we focus on optimizing the manufacturing process to improve the drive current of the 5nm FinFET. The improvement of drive current is one of the most important issues in the FinFETs design. We first investigate the impact of manufacturing process parameters include gate oxide thickness, type of the gate oxide, height of fin, and doping of the source and drain region on threshold voltage, breakdown voltage, and drive current of the transistor. Then, by selecting the optimal parameters of the manufacturing process, we improve the drive current of the 5nm bulk-FinFET.
  • Farsi abstract
    No abstract
  • Keywords
    FinFET , Manufacturing Process , Drive Current Threshold Voltage DIBL Effect , Threshold Voltage , DIBL Effect
  • Journal title
    Journal of Optoelectronical Nano Structures
  • Serial Year
    2020
  • Record number

    2604459

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2604459