Title of article :
Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations
Author/Authors :
Bahrami, Payman Department of Electrical Engineering - Yazd Branch Islamic Azad University, Yazd, Iran , Shayesteh, Mohammad Reza , Pourahmadi, Majid Department of Electrical Engineering - Yazd Branch Islamic Azad University, Yazd, Iran , Hadi Safdarkhani Department of Electrical Engineering - Yazd University, Yazd, Iran
Abstract :
We present the optimization of the manufacturing process of the 5nm bulk-
FinFET technology by using the 3D process and device simulations. In this paper, by
simulating the manufacturing processes, we focus on optimizing the manufacturing
process to improve the drive current of the 5nm FinFET. The improvement of drive
current is one of the most important issues in the FinFETs design. We first investigate
the impact of manufacturing process parameters include gate oxide thickness, type of
the gate oxide, height of fin, and doping of the source and drain region on threshold
voltage, breakdown voltage, and drive current of the transistor. Then, by selecting the
optimal parameters of the manufacturing process, we improve the drive current of the
5nm bulk-FinFET.
Farsi abstract :
No abstract
Keywords :
FinFET , Manufacturing Process , Drive Current Threshold Voltage DIBL Effect , Threshold Voltage , DIBL Effect
Journal title :
Journal of Optoelectronical Nano Structures
