Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

In this paper, a novel tunnel field effect transistor (TFET) is introduced, that due to its superior gate controllability, can be considered as a promising candidate for the conventional TFET. The proposed electrically doped heterojunction TFET (EDHJTFET) has a 3D core-shell nanotube structure with external and internal gates surrounding the channel that employs electrostatically doping rather than ionimplantation for creating the tunneling junction. The staggered type InAs/GaAs0.1Sb0.9 heterojunction devices, considerably amplifies the band to band tunneling rate. The effect of device geometry and physical design parameters on the performance of the device are comprehensively investigated and cut off frequency of 200GHz, on/off current ratio of 9.41×108 and subthreshold swing of 8.7 mV/dec are achieved. The sensitivity analysis reveals that core/shell control gate workfunction and doping density are critical design parameters that may affect the device performance. Moreover, the insensitivity of off-state current to the drain voltage variation and channel length scaling signifies the application of this device in nanoscale regime.