Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N / GaN Multiple Quantum Well Solar Cells

The present study was conducted to investigate current density of 0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostatic pressure. The effects of hydrostatic pressure were taken into account to measure parameters of 0.3 0.7 Al Ga N/ GaN MQWSC, such as interband transition energy, electronhole wave functions, absorption coefficient, and dielectric constant. Finite-difference method (FDM) was used to acquire energy eigenvalues and their corresponding eigenfunctions of 0.3 0.7 Al Ga N/ GaN MQW and hole eigenstates were calculated through a 66 k.p method under an applied hydrostatic pressure. It was found that the depth of the quantum wells, bandgaps, band offset, the electron, and hole density increases with the hydrostatic pressure. Also, as the pressure increases, the electron and hole wave functions will have less overlap, the amplitude of the absorption coefficient increases, and the binding energy of the excitons decreases. Our results showed that a change in the pressure up to 10 GPa caused absorption coefficients҆ peaks of light and heavy holes to shift to low wavelengths of up to 32 nm, which in turn decreased short-circuit current density and increased open circuit voltage.