Author/Authors :
Lin, Yu-Chiao Department of Physics - Department of Materials and Optoelectronic Science - Center for Nanoscience and Nanotechnology - National Sun Yat-sen University - Kaohsiung , Taiwan , Lo, Ikai Department of Physics - Department of Materials and Optoelectronic Science - Center for Nanoscience and Nanotechnology - National Sun Yat-sen University - Kaohsiung , Taiwan , Shih, Hui-Chun Department of Physics - Department of Materials and Optoelectronic Science - Center for Nanoscience and Nanotechnology - National Sun Yat-sen University - Kaohsiung , Taiwan , Chou, MitchM.C. Department of Physics - Department of Materials and Optoelectronic Science - Center for Nanoscience and Nanotechnology - National Sun Yat-sen University - Kaohsiung , Taiwan , Schaadt, D.M. Institute of Energy Research and Physical Technologies - Clausthal University of Technology and Energy Research Center ofLower Saxony - Clausthal-Zellerfeld, Germany
Abstract :
𝑀-plane GaN thin films were grown on LiAlO2substrates under different N/Ga flux ratios by plasma-assisted molecular beamepitaxy. An anisotropic growth of𝑀-plane GaN was demonstrated against the N/Ga flux ratio. As the N/Ga flux ratio decreasedby increasing Ga flux, the GaN surface trended to a flat morphology with stripes along[1120]. According to high-resolution X-raydiffraction analysis, Li5GaO4was observed on the interface between GaN and LiAlO2substrate. The formation of Li5GaO4wouldinfluence the surface morphology and crystal quality.
Keywords :
Growth and Characterization , M-Plane GaN Thin Films Grown , 𝛾-LiAlO2 (100) Substrates , LAO , QCSE
