Author/Authors :
Choi, Joonhyuk Dongguk University - Department of Semiconductor Science, Korea , Song, JaeHoon Dongguk University - Department of Semiconductor Science, Korea , Jung, Kyooho Dongguk University - Department of Semiconductor Science, Korea , Kim, Yongmin Dongguk University - Department of Semiconductor Science, Korea , Im, Hyunsik Dongguk University - Department of Semiconductor Science, Korea , Jung, Woong Dongguk University - Department of Semiconductor Science, Korea , Kim, Hyungsang Dongguk University - Department of Physics, Korea , Do, Young Ho Hanyang University - Department of Physics, Korea , Kwak, June Sik Hanyang University - Department of Physics, Korea , Hong, Jinpyo Hanyang University - Department of Physics, Korea
Abstract :
Resistance switching phenomena in an amorphous Ni–Ti–O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni–Ti–O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni–O and Ti–O binding states at the Ni–Ti–O film/electrode interface.
