Author/Authors :
Svensson, Johannes Goteborg University - Department of Physics, Sweden , Sourab, Abdelrahim A. Goteborg University - Department of Physics, Sweden , Tarakanov, Yury Chalmers University of Technology - Department of Applied Physics, Sweden , Lee, Dong Su Max-Plarick-Institut fur Festkorperforschung, Germany , Park, Seung Joo Seoul National University - School of Physics, Nano Systems Institute-National Core Research Center, Korea , Baek, Seung Jae Seoul National University - School of Physics, Nano Systems Institute-National Core Research Center, Korea , Park, Yung Woo Seoul National University - School of Physics, Nano Systems Institute-National Core Research Center, Korea , Campbell, Eleanor E.B. Goteborg University - Department of Physics, Sweden , Campbell, Eleanor E.B. Edinburgh University - School of Chemistry, UK
Abstract :
Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.
