Title of article
The effects of multiple-gated layout on power consumption of Pseudomorphic-HEMTs
Author/Authors
OSMAN, M. N. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , YAAKOB, S. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , YAHYA, M. R. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , AWANG MAT, A. F. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , AWANG, Z. Universiti Teknologi MARA (UiTM) - Microwave Technology Center, Malaysia
From page
1
To page
6
Abstract
A study of the effects on power consumption exhibited by multiple-gated layout pseudomorphic HEMTs device is presented here. This study required that the DC parameter extraction to be carried out on the p-HEMT device with a specific number of gate layouts. From the I-V measurement, it was found that the p-HEMT that applied six gated layout can reduce 75% of power consumption as compared to two gated layout in producing the same amount of This result proved that the p-HEMT device with higher number of gates consumes less power. The consequences of this lead to the reduction of device power consumption without sacrifying the device performance.
Journal title
Journal of Sustainability Science and Management
Journal title
Journal of Sustainability Science and Management
Record number
2644735
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