Author/Authors :
OSMAN, M. N. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , YAAKOB, S. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , YAHYA, M. R. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , AWANG MAT, A. F. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , AWANG, Z. Universiti Teknologi MARA (UiTM) - Microwave Technology Center, Malaysia
Abstract :
A study of the effects on power consumption exhibited by multiple-gated layout pseudomorphic HEMTs device is presented here. This study required that the DC parameter extraction to be carried out on the p-HEMT device with a specific number of gate layouts. From the I-V measurement, it was found that the p-HEMT that applied six gated layout can reduce 75% of power consumption as compared to two gated layout in producing the same amount of This result proved that the p-HEMT device with higher number of gates consumes less power. The consequences of this lead to the reduction of device power consumption without sacrifying the device performance.
