Author/Authors :
SOETEDJO, H. Telekom Research and Development Sdn Bhd. - Microelectronic and Nano Technology Programme, Malaysia , SABTU, I. Telekom Research and Development Sdn Bhd. - Microelectronic and Nano Technology Programme, Malaysia , YAHYA, M. R. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia , AWANG MAT, A. F. TM R D Sdn. Bhd - Microelectronic Nano Tech, Malaysia
Abstract :
Various characteristics of the pREMT structures have been investigated using a three-probe contact technique. This measurement is considerably new as from the epitaxiallaycr (sample) prior to the actual device complction; the justification of current-voltage characteristics of transistor device could be done. This justification could lead to reducing timc-and cost when poor sample is found. Among the three different samples of pHEMTs of AlGaAs / InGaAs, the current-voltage characterization has shown that the structure with a larger channel thickness (26 nm) shows greater saturation current and breakdown voltage.
