Title of article
Optical characterization of Cu3N thin film with Swanepoel method
Author/Authors
Dorranian, Davoud islamic azad university - Plasma Physics Research Center, ايران , Dejam, Laya islamic azad university - Plasma Physics Research Center, ايران , Mosayebian, Gelareh islamic azad university - Plasma Physics Research Center, ايران
From page
1
To page
9
Abstract
Swanepoel method is employed for spectroscopic determination of optical properties of Cu3N thin film using transmittance data. Investigated films have been deposited using reactive magnetron sputtering system. Deposition time was 9 to 21 min. Refractive index, absorption coefficient, and bandgap energy of the samples are determined. Thickness of the films is calculated by Swanepoel method, and result is compared with the thickness of the films measured by profilmeter. It is shown that Swanepoel method is a reliable way to calculate the optical constants of thin films when the transmittance spectrum of the film is influenced by wavelike patterns due to reflection of the probe beam from different interfaces.
Keywords
Copper nitride , Thin film , Magnetron sputtering , Energy gap , Swanepoel method
Journal title
Journal of Theoretical and Applied Physics
Journal title
Journal of Theoretical and Applied Physics
Record number
2657733
Link To Document