The effect of carrier capture and escape on the optical gain of quantum-well semiconductor lasers

Effects of the carrier capture and escape on the optimal gain of a quantum-well system are introduced and analyzed. The analysis is based on the density matrix time evolution equation solved in the linear approximation. It has been found that the capture and escape effects modify the broadening function and, as a consequence, reduce the optical and differential gain. The temperature dependence of the gain peak resulting from the inclusion of carrier capture/escape processes has been found.