Title of article :
Seed Layer Assisted Growth of Chemical Bath Deposited ZnO Nanorods : Influence of Seed Layer Thickness
Author/Authors :
rahman, r. a. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , zulkefle, m. a. universiti teknologi mara - faculty of electrical engineering, Shah Alam, M. A. , herman, s. h. universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia , alip, r. i universiti teknologi mara - faculty of electrical engineering, Shah Alam, Malaysia
From page :
81
To page :
86
Abstract :
Synthesis of zinc oxide (ZnO) nanorods by chemical bath deposition (CBD) was presented in this study. In this study, indium tin oxide (ITO) was used as the substrate, and the thickness of ZnO seed layer was varied, by varying the number of spin coating layers (1, 2, 3, 4 and 5 layers) while other growth parameters were remained constant. Based on the result obtained, the quality of ZnO nanorods was when te number of seed layer was increase. Based on the transmittance and absorbance value obtained, the optical energy band gap for all the growth ZnO nanorods were calculated. All of the ZnO nanorods thin films have the optical energy band gap in the range of 3.34-4.10 eV, which is approaching the theoretical band gap of ZnO (3.37 eV).
Keywords :
chemical bath deposition (CBD) , seed layer , sol , gel spin coating , ZnO nanorod
Journal title :
International Journal Of Electrical an‎d Electronic Systems Research
Journal title :
International Journal Of Electrical an‎d Electronic Systems Research
Record number :
2661164
Link To Document :
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