Title of article
Swift heavy ion effects in gallium nitride
Author/Authors
Mansouri, S. UMR CNRS - Structure des Interfaces et Fonctionnalitée des Couches Minces (SIFCOM), France , Marie, P. UMR CNRS - Structure des Interfaces et Fonctionnalité des Couches Minces (SIFCOM), France , Dufour, C. UMR CNRS - Structure des Interfaces et Fonctionnalité des Couches Minces (SIFCOM), France , Nouet, G. UMR CNRS - Structure des Interfaces et Fonctionnalité des Couches Minces (SIFCOM), France , Monnet, I. CEA-CNRS-ENSICAEN - Centre Interdisciplinaire de Recherches Ions Lasers (CIRIL), France , Lebius, H. CEA-CNRS-ENSICAEN - Centre Interdisciplinaire de Recherches Ions Lasers (CIRIL), France , Benamara, Z. Université Djillali Liabbes de Sidi Bel Abbes - Laboratoire de microélectronique appliquée, Algérie , AI-Douri, Y. CRISMAT, ENSICAEN/CNRS UMR, France
From page
101
To page
106
Abstract
GaN layers were irradiated at room temperature with swift heavy ions. AFM (atomic force microscopy) images of specimens irradiated under grazing incidence show tracks. With 74 MeV Kr, the contrast is very faint unlike for 92 MeV Xe and 104 MeV Pb. This behavior indicates that the electronic energy loss threshold to produce tracks at grazing incidence is around 17keV/nm. These tracks consist of two parts, one with a rather homogeneous contrast, and a second with regularly spaced dots. Measurements in the bulk region after irradiation with 132 MeV Pb ions show tracks with a diameter of about 3 nm.
Keywords
GAN , AFM , Threshold energy.
Journal title
International Journal of Nanoelectronics and Materials
Journal title
International Journal of Nanoelectronics and Materials
Record number
2664782
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