Title of article :
Simulation model of multi-junction InxGa1-xN solar cells
Author/Authors :
J. Aziz, Wisam no affliation , Ibrahim, K. no affliation
Abstract :
In this model we investigate theoretically the characteristics of multi junction InxGa1-xN series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab program. The doping levels of p-type and n-type were 5*10^18 cm^-3 and 1*10^18 cm^-3 respectively. The efficiency is found to be varied from 18.01% for single junction to 42.55% for five junctions. The enhancement in VOC was observed from the lower values of total thickness.
Keywords :
Materials , Multi , junction Solar cells , High efficiency.
Journal title :
International Journal of Nanoelectronics and Materials
Journal title :
International Journal of Nanoelectronics and Materials
