Title of article
Simulation model of multi-junction InxGa1-xN solar cells
Author/Authors
J. Aziz, Wisam no affliation , Ibrahim, K. no affliation
Pages
10
From page
43
To page
52
Abstract
In this model we investigate theoretically the characteristics of multi junction InxGa1-xN series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab program. The doping levels of p-type and n-type were 5*10^18 cm^-3 and 1*10^18 cm^-3 respectively. The efficiency is found to be varied from 18.01% for single junction to 42.55% for five junctions. The enhancement in VOC was observed from the lower values of total thickness.
Keywords
Materials , Multi , junction Solar cells , High efficiency.
Journal title
International Journal of Nanoelectronics and Materials
Serial Year
2010
Journal title
International Journal of Nanoelectronics and Materials
Record number
2664806
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