Title of article :
The effect of uniaxial and torsional strains on the density of states of single walled carbon nanotubes
Author/Authors :
Pakkhesal, M Department of Electrical Engineering - Faculty of Engineering - Ferdowsi University of Mashhad - Mashhad, Iran , Hosseini, S.E Department of Electrical Engineering - Faculty of Engineering - Ferdowsi University of Mashhad - Mashhad, Iran
Abstract :
In this paper, we investigate the effect of uniaxial and torsional strains on
the Density of States (DoS) of single walled Carbon nanotubes (SWCNTs). We employ
the nearest neighbor and also the third nearest neighbor π-TB (Tight Binding) models for
our investigation. It is shown that uniaxial and torsional strains in some cases of metallic
SWCNTs not only open a band gap, but also effectively increase the DoS of SWCNT. It
is also shown that the mentioned types of strain have different effects on the DoS of chiral
SWCNTs; in some types, they increase the DoS at the band edges, while they decrease it
at the band edges in other types.
Keywords :
Tight binding , Carbon nanotubes , Density of states , Electronic band structure , Uniaxial strain , Torsional strain
Journal title :
Scientia Iranica(Transactions D: Computer Science and Electrical Engineering)
