Title of article :
SOl DEVICE SIMULATION OF AN AREA EFFICIENT BODY CONTACT
Author/Authors :
Daghighi, Arash Islamic Azad Univcrsitv Majlcsi Branch of lsfahan - Department of Electrical Engiuceriug, ايران , A. Osman, Mohamed Washington State University - School of Electrical Engincc ring and Computer Science, USA
Abstract :
We haw used three-dimensional simulat ion to investlga tc applicat ion of a new body con tact to SO ldevices. Pcrformunce characteris tics of the new body cont act on hi gh-voltage SOl devices were studied.Our cumparative inves tigation showed incre ased cu rrent drive, im pruved cutoff fre quency, re duced onresistance while attaining satisfactory breakdown voltage. The new body contact is applicable to bothhigh and low ,voltage SOl MOSFETs
Keywords :
Three , Dimensional Simulation%Float ing Body Effects%On , resistance%Breakdown voltage%IsothermalDrift Diffusion Model%Cutoff Frequency%
Journal title :
Majlesi Journal of Electrical Engineering
Journal title :
Majlesi Journal of Electrical Engineering
