Title of article
Influence of Laser Irradiation Times on Properties of Porous Silicon
Author/Authors
Ali, Sabah M. University of Technology - School of Applied Sciences - Department of Applied Physics, Iraq , Alwan, Alwan M. University of Technology - School of Applied Sciences - Department of Applied Physics, Iraq , Abass, Oday A. University of Technology - School of Applied Sciences - Department of Applied Physics, Iraq
From page
640
To page
646
Abstract
Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.
Keywords
Porous Silicon , Laser beam , SEM Images.
Journal title
Baghdad Science Journal
Journal title
Baghdad Science Journal
Record number
2688209
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