Title of article
I-V Characteristic and Crystal Structural Of a-As/c-Si Heterojunctions
Author/Authors
Al.Haidery, Jenan H. University of Nihreen - college of Science - Department of physics, Iraq , Al.Ansari, Ramaz A. university of Baghdad - college of Science for women - Department of physics, Iraq , Al.Lamy, Hussien K. university of Baghdad - college of Science - Department of physics, Iraq , Mohammed, Hanaa I. University of Baghdad - College of Education Ibn Al- Haitham - Department of Physics, Iraq
From page
621
To page
624
Abstract
In this research the a-As flims have been prepared by thermal evaporation with thickness 250 nm and rata of deposition (1.04nm/sec) as function to annealing temperature (373 and 373K), from XRD analysis we can see that the degree of crystalline increase with , and I-V characteristic for dark and illumination shows that forward bias current varieties approximately exponentially with voltage bias. Also we found that the quality factor and saturation current dependence on annealing temperatures
Keywords
Amorphous Arsenic , Heterojunction and Annealing temperature
Journal title
Baghdad Science Journal
Journal title
Baghdad Science Journal
Record number
2690314
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