Electric Characterization of Hexaindium Heptaselenide Single Crystals

The electrical conductivity (σ) and Hall coefficient (RH) ofmonocrystals In 6Se7 have been investigated over the temperaturerange 148-528 K. The crystal was grown by a modified Bridgmantechnique. The investigation showed that our samples are P-type conducting.The forbidden energy gap was calculated and found to be0.52 eV, whereas the ionization energy of the impurity level was 0.077 eV. The values of the electrical conductivity, Hall coefficientand carrier concentration at room temperature, were 9.56 ~ 10.^-4 Ω^-1cm^-1, 10.04 x10^6 cm3 C.1 and 9.964 x10^8 cm.^3 respectively. TheHall mobility at room temperature (muH), was found to be 13.1x 10^3cm2 V.1 S.1. Also the dependence of the Hall mobility on temperature was presented graphically.