Author/Authors :
Nagat, A. T. Girls college of Education in Jeddah - Physics Department, KSA , Bahabri, F. S. South Valley University - Faculty of sciences, - Physics Department, Egypt , Mobark, M. M. King Abdulaziz University - Faculty of Sciences - Physics Department, KSA , Shaban, H. T. Girls college of Education in Jeddah - Physics Department, KSA , Al Ghamdi, A. A. South Valley University - Faculty of sciences - Physics Department, Egypt , Alharbi, S. R. King Abdulaziz University - Faculty of Sciences - Physics Department, KSA
Abstract :
Investigation of the switching phenomenon in single crystalTlInS2 revealed that it is typical for a memory switch. The switchingprocess takes place with both polarities on the crystal and havesymmetrical shapes. Current-voltage characteristics (CVC) ofsymmetrical Ag/p-TlInS2/Ag structures exhibit two distinct regions,high resistance OFF state and low-resistance ON state having negativedifferential resistance (NDR). TlInS2 is a ternary semiconductorexhibiting S-type i-v characteristics. The results strongly indicate thatthe phenomenon in our sample is very sensitive to temperature, lightintensity and sample thickness. The switching parameters werechecked under the influence of different factors of the ambientcondition.
