mam Khomeini International University, Buein Zahra Higher Education Centre of Engineering and Technology, Department of Physics and Engineering Sciences, Iran

Graphene Nano-Ribbons (GNR) are strong candidates for future materials in the electronics industry. In this paper, we extract the mechanical and electrical properties of AGNRs combination of different widths and deposition of silicon dimer to create Metal-insulator-semiconductor by the DFT method. Results demonstrate that by decreasing the mean width and strain of AGNR-AGNR composite and replacing the carbon dimer with silicon dimer, the bandgap of the system will reduce. The AGNR-Si-AGNR composite is a promising candidate for transistor application due to the small bandgap and high current flow allowance due to the high near the Fermi’s level electronic state involvement under the bias voltage.