The Effect of Ambient Temperature on the Linear and Nonlinear Optical Properties of InAs/GaAs Quantum Dot

In this work, we calculated the energy levels of truncated pyramidal-shaped InAs/GaAs QDs by using the finite element method by taking into account the ambient temperature, because the system under study is not symmetric, it is impossible to use the analytical method to find the wave functions and energy levels of the electron, and the finite element method is the solution to such problems. We showed that, with increasing the temperature, the energy level of both the ground state and the first excited state as well as S-to-P transition frequency increase. But the important point was that, increasing the temperature can shift linear and nonlinear susceptibility graphs to higher frequencies. For example, for a pyramid with a base length of 25 nm and a height of 5 nm, at zero and 500 K the maximum linear and nonlinear susceptibility values are shifted from 14 terahertz to the 18 terahertz. This ability can be effective in designing optical devices.