Title of article :
Simulation and Fabrication of 3.5W X-band Power Amplifier using Discrete GaN HEMT Transistors
Author/Authors :
Forouzanfar, Mehdi Electronics Group - Birjand University, Birjand, Iran
Abstract :
This paper presents different steps of simulation and fabrication of a power amplifier, which was realized using a discrete GaN HEMT transistor in the frequency range of 8.8-9.2 GHz. The required wire bonds and matching circuits were characterized using three-dimensional simulations in HFSS and Momentum ADS software. The fabricated power amplifier provides an output power of 3.5W and a power gain of 13 dB.
Keywords :
GaN HEMT , Discrete GaN HEMT Transistors , Matching Circuit , Output Power , X-band
Journal title :
Majlesi Journal of Telecommunication Devices
