Author/Authors :
Udhiarto, Arief university of indonesia - Faculty of Engineering - Electrical Engineering Department, Indonesia , Udhiarto, Arief Shizuoka University - Research Institute of Electronics, Japan , Purwiyanti, Sri Shizuoka University - Research Institute of Electronics, Japan , Purwiyanti, Sri university of indonesia - Faculty of Engineering - Electrical Engineering Department, Indonesia , Moraru, Daniel Shizuoka University - Research Institute of Electronics, Japan , Mizuno, Takeshi Shizuoka University - Research Institute of Electronics, Japan , Tabe, Michiharu Shizuoka University - Research Institute of Electronics, Japan
Abstract :
We study nanowire silicon pin and pn-junctions at room and low temperature. Photovoltaic effects are observed for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered to have the main role for single-photon detection capability. Fundamental mechanism of dopant-based single-photon detection in nanowire pn-junction is described in details.
Keywords :
dopant cluster , nanowire pn , junction , single dopant , single photon
