The Effect of Compressive Stress and Tensile Strain on Graphene Nanoribbon Island in Single Electron Transistor

The single electron transistor (SET) is nanoscale device that can be utilized in future integrated circuits. It contains three electrodes and one island that is located between them. The island material impacts on SET performance. Therefore graphene with unique properties is selected for the island material with compressive stress and tensile strain imposed on it. In this paper, an appropriate mathematical model is derived for the device current taking the impact of compressive stress and tensile strain on the graphene nanoribbon (GNR) island into account. Moreover, the impact of numbers of atoms along the GNR length and applied gate voltage are investigated and the obtained I-V curves are compared together. Furthermore, the SETs island are designed and their band structures are plotted and then their band gaps are calculated. The charge stability diagrams of SET with compressive stress and tensile strain are plotted and analyzed. Their coulomb diamond areas and coulomb blockade ranges are compared together. Finally, GNR SET with better operation is defined.