Effect of Potential on Electrodeposited Cu2O Thin Film onto Copper Substrate at Low Duration

This work is devoted to the electrodeposition of Cu2O on copper-substrate (Cu) by linear-sweep-voltammetry (LSV) method at short time of deposition (10 min) and a bath temperature of 50 °C. The influence of potential value ({E1} = {-100; -200 mV}; {E2 = -200; -300 mV}, {E3 = -300; -400 mV}, {E4= -400; -500 mV}, {E5 = -500; -600 mV} and {E6 = -600; -700 mV}) on structural, optical, and morphological properties of the electrodeposited Cu2O thin-films on Cu-substrate were investigated. The synthesized Cu2O thin films were analyzed by several techniques such as Raman-spectroscopy, X-ray-diffraction, UV-vis measurements and FEG-Scanning-Electron-Microscopy (FE-SEM-EDS). The X-ray-Diffraction has revealed that the electrodeposited thin-films correspond well to the cubic structure (Pn3 ̅m) and has revealed the good crystallinity for those deposited in the potential range -400 to 500 mV. Raman measurement confirm the cubic crystal structure (Pn3 ̅m) of the synthesized samples, all the thin-films have a high light absorption capacity in the visible spectrum and the estimated value of the optical gap are close to 1.9 eV.