Dechanneling and the energy loss of protons along planar directions of Si

In the present paper, the dechanneling and the energy loss of protons at the energy interval of 1400 to 2200 keV along the {100} and the {110} planar directions of Si were studied by the simulation of the measured channeling Rutherford back-scattering spectra based on the exponential dechanneling function with a parameter . This parameter is proportional to the dechanneling rate and represents the mean distance that ions travel along the channel before escaping from the channel. The Levenberg-Marquardt algorithm was used to set the best values of the channeling to random energy loss ratio, and the mean channeling distance. The experimental results are well reproduced by this simulation. The data analyzed in this energy range did not show any particular trend with regard to energy dependence of the parameters. The differences between both the planar channels in the Si crystal and their influence on the energy loss ratio and dechanneling of proton ions are described.