Influence of Laser Pulse Energy on CFTS Thin Film Deposited by Pulsed Laser Deposition

meta charset= UTF-8 We investigate the Cu2FeSnS4 (CFTS) thin film. The raw materials of this thin film are copper, iron and tin, which are mixed in the form of tablets and then are deposited on a glass substrate through the process of pulsed laser deposition (PLD). The produced metallic thin films are then sulfurized to carry out the process of merging the element sulfur in the thin films and forming CFTS structure. We investigate the influence of sulfurization temperature and the laser pulse energy in the PLD process on the deposited CFTS thin films. The X-ray diffraction (XRD), Raman and UV-Vis analyses’ results show that by decrease in sulfurization temperature from 600 °C to 550 °C the crystal quality of the thin films is improved, which is realized by increase in volume and quality of the CFTS phase. On the other hand, the results confirm that the laser fluence is a decisive factor which should be taken into account to achieve an optimized structure.