Title of article
A Review on Static and Dynamic Characterization of Digital Circuits in CNTFET and CMOS Technology
Author/Authors
Marani ، Roberto Institute of Intelligent Industrial Technologies and Systems for Advanced Manufacturing (STIIMA) - National Research Council of Italy , Perri ، Anna Gina Electronic Devices Laboratory, Department of Electrical and Information Engineering - Polytechnic University of Bari
From page
97
To page
108
Abstract
In this paper we review a procedure to characterize digital circuits in CNTFET and CMOS technology in order to compare them. To achieve this goal, we use a semi-empirical compact CNTFET model, already proposed by us, and the BSIM4 model for MOS device. After a brief review of these models, as example, we review the static and dynamic characterization of NAND gate and Full Adder, using the software Advanced Design System (ADS) which is compatible with the Verilog-A programming language. The obtained results allow to highlight the differences between the two technologies.
Keywords
CNTFET , MOSFET , Modelling , Digital circuits , Verilog , A
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Record number
2741705
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