Title of article
An Experimental Investigation of Deposition of ZnS Materials on Glass Substrate with SILAR
Author/Authors
El Farri ، Haytham Department of Physics - Faculty of Sciences - University Ibn Tofail , Yousfi ، Amal Department of Physics - Faculty of Sciences - University Ibn Tofail , Fahoume ، Mounir Department of Physics - Faculty of Sciences - University Ibn Tofail , El Gana ، Lahoucine Department of Physics - Faculty of Sciences - University Ibn Tofail , Znaidi ، Latifa Department of Physics - Faculty of Sciences - University Ibn Tofail
From page
199
To page
207
Abstract
The formation of zinc sulfide (ZnS) is the most promising semiconductor material, particularly for optical and photovoltaic applications. The influence of the number of cycles on ZnS thin films deposited at room temperature was studied. According to our findings, the results showed that the number of deposition cycles affected the crystallinity, grain size, film thickness, and shape of the obtained films. The XRD analysis confirmed that the thin films fabricated had a crystalline structure of zinc blend ZnS with a preferred orientation in the plan (111). The gap energy of ZnS has been obtained in the range of 3.34 eV to 3.68 eV.
Keywords
SILAR , ZnS , XRD , Band gap energy , Sulfurization , SEM
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Journal title
International Journal of Nanoscience and Nanotechnology (IJNN)
Record number
2754198
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