• Title of article

    Integration of Quadrature Oscillator and Floating Inductor in FinFET Transistor Design: Innovations and Applications

  • Author/Authors

    Mohammed ، A. Ahmed Department of Electrical Engineering - University of Kirkuk , Demirel ، Hüseyin Department of Electrical and Electronic Engineering - Karabuk University

  • From page
    117
  • To page
    123
  • Abstract
    In the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silicon A.S.I. chip could have thousands or even millions of transistors on it. A rise in integration levels led to the development of Fin-type Field Effect Transistor (FinFETs) technology. In this research, an improved circuit design for a floating active inductor (FAI) and quadrature sinusoidal oscillator (QSO) is implemented employing only two active filters, the Z-copy-Voltage Differential Transimpedance Amplifier (Zc-VDTA). The purpose of the FAI is to contain two Zc-VDTA and one resistor with a ground capacitor, and it is easy to integrate the parameters of the Zc-VDTA bias current (IB) through the adjustment of the circuit. In order to verify the dependability of the circuits designed using floating active inductance circuits, a Butterworth fourth-order low-pass filter was created via component replacement. All the simulations have been carried out on 7 nm using linear technology SPICE, and cadence virtuoso tool.
  • Keywords
    Fin Type Field Effect Transistor (FinFETs) , Integrated Circuits (ICs) , Floating Active Inductor (FAI) , Quadrature Sinusoidal Oscillator (QSO)
  • Journal title
    Iranian Journal of Electrical and Electronic Engineering(IJEEE)
  • Journal title
    Iranian Journal of Electrical and Electronic Engineering(IJEEE)
  • Record number

    2762141