• Title of article

    Investigation of the Structural and Thermodynamic Parameters on the Nonlinear Optical Properties of InGaAs/InP Triple Quantum Well Exposed to an External Electric Field

  • Author/Authors

    Sayrac ، Muhammed Department of Nanotechnology Engineering - Sivas Cumhuriyet University , Dakhlaoui ، Hassen Nanomaterials Technology unit, Department of Physics - Basic and Applied Scientific Research Center (BASRC), College of Science of Dammam, College of Sciences for Girls - Imam Abdulrahman Bin Faisal University , Mora-Ramos ، Miguel Centro de Investigación en Ciencias, Instituto de Investigación en Ciencias Básicas y Aplicadas (IICBA) - Universidad Autonoma del Estado de Morelos , Ungan ، Fatih Physics Department - Sivas Cumhuriyet University

  • From page
    277
  • To page
    293
  • Abstract
    In this study, the effects of both tunable physical parameters and thermodynamic variables on the linear and nonlinear optical properties of the InGaAs/InP triple quantum well are theoretically investigated in detail. In addition, the effect of an external static electric field applied parallel to the growth direction of the structure was also studied. To carry out this analysis, firstly, the energy eigenvalues and eigenfunctions of the system were obtained as a result of solving the time-independent Schrödinger equation using the diagonalization method, under the effective mass and envelope function approach. Then, using these energy eigenvalues and eigenfunctions, the nonlinear optical properties of the structure were calculated from the expressions derived within the compact density matrix approach via the iterative method. The effect of adjustable structure parameters and applied external fields affects the difference in subband energy levels at which transitions occur and the magnitudes of the dipole moment matrix elements. These changes in the electronic properties of the structure cause the peak positions of the total (linear plus nonlinear) optical absorption coefficient and total relative refractive index change coefficient (RRIC) to shift towards lower or higher energy regions. These results are expected to enable the proper design of new optoelectronic devices.
  • Keywords
    InGaAs , InP quantum well , Hydrostatic pressure , Temperature , External electric field
  • Journal title
    International Journal of Nanoscience and Nanotechnology (IJNN)
  • Journal title
    International Journal of Nanoscience and Nanotechnology (IJNN)
  • Record number

    2763225