Title of article
Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography
Author/Authors
Kadota، Toshiaki نويسنده , , Kageyama، Hiroshi نويسنده , , Wakaya، Fujio نويسنده , , Gamo، Kenji نويسنده , , Shirota، Yasuhiko نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-705
From page
706
To page
0
Abstract
A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of (almost equal)2 (mu)C cm^-2 and enabling the fabrication of (almost equal)25 nm line patterns.
Keywords
Application-production research , prediction , grinding , Surface finish , Power requirement , Genetic-fuzzy system
Journal title
CHEMISTRY LETTERS
Serial Year
2004
Journal title
CHEMISTRY LETTERS
Record number
28417
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