Title of article :
Field-effect Transistors Based on Poly(p-phenylenevinylene) Derivatives
Author/Authors :
Tada، Hirokazu نويسنده , , Fujiwara، Eiichi نويسنده , , Furukawa، Yukio نويسنده , , Muratsubaki، Masanori نويسنده , , Noguchi، Takanobu نويسنده , , Ohnishi، Toshihiro نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
Field-effect mobilities and on/off current ratios have been determined for the organic field-effect transistors (OFETs) based on three kinds of poly(p-phenylenevinylene) derivatives. The best transistor performance has been obtained for poly(2-methoxy-5(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV). The hole mobility and the on/off ratio obtained for the MEH-PPV OFET are 3.6 × 10^-4 cm^2/Vs and 1.5 × 10^6, respectively. These OFETs operate stably in the atmosphere as well as in vacuum.
Keywords :
Genetic-fuzzy system , Application-production research , prediction , grinding , Surface finish , Power requirement
Journal title :
CHEMISTRY LETTERS
Journal title :
CHEMISTRY LETTERS
