High-power quantum well remote junction laser and its electrical noise characteristics

We designed and fabricated new structure lasers, the high-power AlGaAs/GaAs remote junction (RJ) single quantum well (SQW) semiconductor lasers whose p-n junction was separated from the active layer. The RJ lasers showed marked reduction of threshold current during early aging period. This reduction was accompanied by a decrease of non-radiative recombination centers in the active layer. For the RJ SQW lasers, the relation between the low-frequency electrical noise and the lifetime of devices is different from the conventional SQW lasers.