Title of article
Analysis of a diode-pumped Nd:YVO4 laser passively Q switched with GaAs
Author/Authors
Li، Rui-Ping نويسنده , , Wang، Qingpu نويسنده , , Zhang، Xingyu نويسنده , , Wang، Yurong نويسنده , , Li، Shichen نويسنده , , Jingliang، He نويسنده , , Xingqiang، Lu نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
-382
From page
383
To page
0
Abstract
A diode-pumped Nd:YVO4 laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the influence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse profile, pulse energy and pulse width of the Q switching with GaAs are simulated by using the conventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whole.
Keywords
Nd:GdCOB crystal , Passive Q-switch , Numerical solution
Journal title
OPTICS & LASER TECHNOLOGY
Serial Year
2001
Journal title
OPTICS & LASER TECHNOLOGY
Record number
31972
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