مرکز منطقه ای اطلاع رساني علوم و فناوري - The refractive index enhancement at Eg in narrow-gap semiconductors: comparison between the interband absorption edge and the oscillator model

Title of article :

The refractive index enhancement at Eg in narrow-gap semiconductors: comparison between the interband absorption edge and the oscillator model

Author/Authors :

K. H. Herrmann، نويسنده , , V. Melzer، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 1996

Pages :

From page :

753

To page :

761

Keywords :

Refractive index , dispersion , Narrow-gap semiconductors

Journal title :

Infrared Physics & Technology

Serial Year :

1996

Journal title :

Infrared Physics & Technology

Record number :

327483

Link To Document :