Analysis of heterojunction resonant cavity-enhanced Schottky photodiodes by using two-valley transport model

D. S. Golubovic، نويسنده ,

روزنامه با شماره پیاپی سال 2002

8

327

334

Phenomenological model for a two-valleysemiconductor , High-speed heterojunction resonant cavity-enhanced Schottky photodiodes , Linear response , Quantum efficiency

Infrared Physics & Technology

2002

Infrared Physics & Technology

327789