Title of article
On the growth conditions of 3–5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy
Author/Authors
E. Luna، نويسنده , , A. Guzman، نويسنده , , A. Trampert، نويسنده , , J. L. Sanchez-Rojas، نويسنده , , E. Calleja، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
8
From page
391
To page
398
Keywords
Photovoltaic effects , Quantum well devices , Molecular Beam Epitaxy , Transmission electronmicroscopy , Infrared photodetectors
Journal title
Infrared Physics & Technology
Serial Year
2003
Journal title
Infrared Physics & Technology
Record number
327847
Link To Document