Title of article
Influence of the gate internal impedance on losses in a power MOS transistor switching at a high frequency in the ZVS mode
Author/Authors
Lefebvre، نويسنده , , S، نويسنده , , Costa، نويسنده , , F، نويسنده , , Miserey، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
33
To page
39
Keywords
High switching frequency , internal gate characterization , source impedance , Poxer MOSFET , zero voltageswitching mode.
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Serial Year
2002
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Record number
340286
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