مرکز منطقه ای اطلاع رساني علوم و فناوري - Physically based models of high power semiconductors including transient thermal behavior

Title of article :

Physically based models of high power semiconductors including transient thermal behavior

Author/Authors :

Schroder، نويسنده , , S، نويسنده , , De Doncker، نويسنده , , R.W.، نويسنده ,

Pages :

From page :

231

To page :

235

Keywords :

circuit simulation , IGCT , GTO , Physical model , thermal model. , PSPICE , MTO , high-power semiconductor

Journal title :

Astroparticle Physics

Record number :

340428

Link To Document :