Title of article
Physical CAD Model for High-Voltage IGBTs Based on Lumped-Charge Approach.
Author/Authors
F. Iannuzzo and G. Busatto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
9
From page
885
To page
893
Keywords
Lumped-Charge method , two-dimensional (2-D) MEDICIsimulations. , Insulated gate bipolar transistor (IGBT) model
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Serial Year
2004
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
Record number
340514
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