Title of article :
Active Gate Voltage Control of Turn-on and Turn-off in Insulated Gate Transistors
Author/Authors :
N. Idir، نويسنده , , R. Bausière، نويسنده , , and J. J. Franchaud، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
7
From page :
849
To page :
855
Keywords :
Active gate voltage control (AGVC) , insulated gate bipolar transistors(IGBTs) , electromagneticinterference (EMI) , metal–oxide–semiconductor field-effect transistor(MOSFET).
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS
Serial Year :
2006
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS
Record number :
340862
Link To Document :
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