General trends of the carbon penetration in Si(0 0 1) surfaces: influences of relevant parameters

Philippe Sonnet، نويسنده , , Louise Stauffer، نويسنده ,

روزنامه با شماره پیاپی سال 2006

44

444

487

Defects , Dimer vacancy , Ad-dimer , Si(001) surface , Density functional calculations , Monte Carlo simulations , Semiconducting surfaces , Carbon , Germanium , Surface relaxation and reconstruction

Progress in Surface Science

2006

Progress in Surface Science

342913